After more than half a year of technical research by the research and development team of the laboratory, on August 12, the first 8-inch N-type SiC crystal was successfully produced, which marks the start of Jingsheng era of SiC, 8-inch third-generation semiconductor material, another landmark achievement of Jingsheng in the field of wide bandgap semiconductor material.

The successfully developed 8-inch SiC crystal with an incipient crystal thickness of 25mm and a diameter of 214mm is a major breakthrough made by Jingsheng in the research and development of large-sized SiC crystals. It has solved the problems such as uneven temperature field, crystal cracking, and distribution of vapor-phase raw materials during the growth of 8-inch SiC crystals, and the problem of overproportion of substrate materials in the cost of SiC devices, laying a foundation for the wide application of large-size SiC substrate.