8-inch「Monolithic Silicon Epitaxial Furnace』
The 8-inch monolithic silicon epitaxial furnace developed by JSG is compatible with the growth of 6-inch and 8-inch silicon wafers, featuring reliable and stable structure and good film thickness and resistance uniformity
6inch「Silicon Carbide Epitaxial Furnace』
The 6-inch silicon carbide epitaxial furnace developed by JSG enables automatic control of the growth process and is compatible with the growth of 4-inch and 6-inch epitaxial wafers, featuring good film uniformity, simple structure and low single-chip cost
6inch「Vertical Silicon Carbide Epitaxial Furnace』
The 6-inch vertical silicon carbide epitaxial furnace developed by JSG enables the epitaxial growth of 4-inch and 6-inch wafers, featuring superior film quality and good process stability, with production efficiency effectively improved
6inch「Double-chip Silicon Carbide Epitaxial Furnace』
Compared with single-chip equipment, the 6-inch double-chip silicon carbide epitaxial furnace developed by JSG increases the single-set production capacity by 70% and reduces the single-chip operating cost by more than 30%
8inch「Furnace Tube』
The 8-inch furnace tube developed by JSG can process 150 pieces of products at the same time, thereby meeting the requirements of polysilicon, annealing and other processes. It has a high degree of automation and can be connected to the factory MES system
12inch「Furnace Tube』
The 12-inch furnace tube developed by JSG can process 125 pieces of products at the same time, thereby meeting the requirements of polysilicon, annealing and other processes. It has a high degree of automation and can be connected to the factory MES system
Advanced Process and Power Semiconductor Equipment（Some products）
With CVD technology as the core, it is applied to epitaxial equipment of advanced processes and power semiconductors
